Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

Abstract
We present Raman and dielectric data on Ni-doped ZnO (Zn1xNixO) ceramics as a function of Ni concentration (x=0.03 , 0.06, and 0.10) and temperature. A mode (around 130cm1 ) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430460K , depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.