The surface science of semiconductor processing: gate oxides in the ever-shrinking transistor
- 10 March 2002
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 500 (1-3), 859-878
- https://doi.org/10.1016/s0039-6028(01)01585-0
Abstract
No abstract availableThis publication has 48 references indexed in Scilit:
- Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systemsApplied Physics Letters, 2000
- New Structural Model forInterfaces Derived from Spherosiloxane Clusters: Implications for SiPhotoemission SpectroscopyPhysical Review Letters, 2000
- Structural properties of thin films of high dielectric constant materials on siliconMicroelectronic Engineering, 1999
- Study of Thermal Stability of Cvd Ta205/Si InterfaceMRS Proceedings, 1999
- Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated interdimer coupling onPhysical Review B, 1998
- Silicon Epoxide: Unexpected Intermediate during Silicon Oxide FormationPhysical Review Letters, 1998
- Pathways for initial water-induced oxidation of Si(100)Applied Physics Letters, 1998
- Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etchingThe Journal of Chemical Physics, 1998
- Dynamical Charge Tensors and Infrared Spectrum of AmorphousPhysical Review Letters, 1997
- Si/interface: New structures and well-defined model systemsPhysical Review Letters, 1993