Ohmic contacts to p- and n-type GaSb

Abstract

Several metallization systems for producing ohmic contacts to p- and n-type gallium antimonide (GaSb) with (100) orientation have been investigated. The surface preparation before contact metallization deposition, dependence on alloying temperature and on carrier concentration and the results of contact resistivity evaluations are described. Futhermore, some applications of ohmic contacts to GaSb devices are presented.