Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
- 24 October 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (17), 171115
- https://doi.org/10.1063/1.3657149
Abstract
The dependence of device characteristics on cavity length is used to determine the injection efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m-plane InGaN/GaN laser diodes. Estimates for the transparency carrier density are discussed in the context of recombination coefficients that have been reported for c-plane InGaN-based light-emitting devices.This publication has 24 references indexed in Scilit:
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