Abruptness of Semiconductor-Metal Interfaces
- 30 March 1981
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 46 (13), 838-841
- https://doi.org/10.1103/physrevlett.46.838
Abstract
A predictive relation between reacted interface width and heat of interface reaction is presented for III-V—compound-semiconductor-metal interfaces. Soft-x-ray photoemission measurements reveal that the thickness of chemically reacted species and the extent and stoichiometry of atomic interdiffusion are determined by the strength and nature of metal-semiconductor bonding. Chemical bond strength directly influences the macroscopic electronic properties as shown by transport measurements.Keywords
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