n-type (Pb)Te doping of GaAs and AlxGa1−xSb grown by molecular-beam epitaxy
- 1 November 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (9), 4184-4187
- https://doi.org/10.1063/1.344004
Abstract
A PbTe flux has been used for n‐type (Te) doping of GaAs, GaSb, and AlGaSb. The effects of surface accumulation and Te desorption were noticeable in secondary‐ion mass spectroscopy profiles of GaAs layers grown at temperatures in excess of 540 °C. Te accumulation was not apparent in GaSb layers grown at temperatures up to 630 °C, but Te desorption occurred from GaSb at temperatures above 540 °C. The donor ionization energy of Te in AlxGa1−xSb is 44 meV for 0.4<X<0.5, i.e., significantly lower than the ionization energies of S or Se in similar material.Keywords
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