Electrical properties of metal-ferroelectric-insulator-semiconductor structures based on ferroelectric polyvinylidene fluoride copolymer film gate for nonvolatile random access memory application
- 15 November 2004
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 96 (10), 5673-5682
- https://doi.org/10.1063/1.1785836
Abstract
Metal-ferroelectric–insulator-semiconductor device structures with ferroelectric vinylidene fluoride-trifluoroethylene copolymer and buffer layer integrated gate stack over are formed, and their potential for fabricating polymeric nonvolatile random access memory devices is demonstrated. Capacitance-voltage studies show that switchable polarization in poled polyvinylidene fluoride PVDF copolymer film changes the -surface potential and causes modulation of the -surface conductance. The hysteresis and bidirectional flatband voltage shift at to , depending on the polarization field direction and remnant polarization at the ferroelectric PVDF copolymer gate, presents a memory window. The space charge at and switchable polarization both reduce the field across the ferroelectric PVDF. The observed asymmetry of the negative flatband-voltage shifts in the negatively poled ferroelectric polymer state is the result of the depletion layer formation, which reduces the field across the polymeric gate. Internal field due to negative and positive bound charges within PVDF copolymer and , respectively, influences polarization switching by pinning of dipoles. Higher negative gate bias is needed to overcome the pinning effect and to switch the polarization field. @2004 American institute of Physics.
Keywords
This publication has 38 references indexed in Scilit:
- Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memoryIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2003
- Electrical Characteristics of the Pt/SrBi2.4Ta2O9/ZrO2/Si Structure for Metal–Ferroelectric-Insulator–Semiconductor Field-Effect-Transistor ApplicationJapanese Journal of Applied Physics, 2002
- High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substratesIEEE Electron Device Letters, 2002
- A survey of circuit innovations in ferroelectric random-access memoriesProceedings of the IEEE, 2000
- Memory window of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for metal ferroelectric insulator semiconductor field effect transistorApplied Physics Letters, 1997
- Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structuresIEEE Electron Device Letters, 1997
- Electrical properties of ferroelectric-capacitor-gate si mos transistors using p(l)zt filmsIntegrated Ferroelectrics, 1997
- Physics of the ferroelectric nonvolatile memory field effect transistorJournal of Applied Physics, 1992
- Ferroelectric MemoriesScience, 1989
- Ferroelectric field-effect memory device using Bi4Ti3O12 filmJournal of Applied Physics, 1975