Konzentration und Beweglichkeit von Elektronen in Zinkoxidkristallen mit Indium-Dotierung

Abstract

The electrical conductivity and Hall effect of zinc oxide single crystals doped with indium has been measured from 5 to 300 K. Similar results to other semiconductors such as silicon and germanium are found. The temperature dependence of the measured quantities was discussed in terms of impurity band conduction and hopping conductivity.