Nucleation and growth of nanocrystalline silicon studied by TEM, XPS and ESR
- 1 June 2003
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 216 (1-4), 376-381
- https://doi.org/10.1016/s0169-4332(03)00445-8
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Temperature behaviour of optical properties of Si $\mathsf{^+}$ -implanted SiO $\mathsf{_2}$The European Physical Journal D, 2000
- Photoluminescence from n-(p-) type impurity doped Si nanocrystalsMRS Proceedings, 2000
- Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon NanocrystalsMRS Proceedings, 2000
- Size classification of Si nanoparticles formed by pulsed laser ablation in helium background gasApplied Physics A, 1999
- Visible light-emitting devices with Schottky contacts on an ultrathin amorphous silicon layer containing silicon nanocrystalsApplied Physics Letters, 1999
- Blue electroluminescence from high dose Si+ implantation in SiO2Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1999
- Stable and efficient electroluminescence from a porous silicon-based bipolar deviceApplied Physics Letters, 1996
- Photoluminescence of Si-Rich SiO2 Films: Si Clusters as Luminescent CentersJapanese Journal of Applied Physics, 1993
- A newly developed high resolution hot stage and its application to materials characterizationMicroscopy Microanalysis Microstructures, 1993
- Modification of SiO through room-temperature plasma treatments, rapid thermal annealings, and laser irradiation in a nonoxidizing atmospherePhysical Review B, 1988