High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC
- 29 July 2013
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 103 (5), 053514
- https://doi.org/10.1063/1.4816762
Abstract
We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity better than the experimentally limited 1 ppb. The strong increase in sensitivity of quasi freestanding epitaxial graphene can be explained by a Fermi-energy close to the Dirac point, leading to a strongly surface doping dependent sample resistance. Both sensors show a negligible sensitivity to N2, NH3, and CO.Keywords
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