The adsorbed states of ethylene on Si(100)c(4×2), Si(100)(2×1), and vicinal Si(100) 9°: Electron energy loss spectroscopy and low-energy electron diffraction studies

Abstract

The adsorbed states of ethylene on the Si(100)c(4×2), Si(100)(2×1), and the Si(100) 9° vicinal surfaces have been studied using high resolution electron energy loss spectroscopy (EELS) and low‐energy electron diffraction (LEED). Ethylene is nondissociatively chemisorbed on the Si(100) surface in the wide temperature range between 77 and ∼600 K, and is rehybridized to have a near sp³ hybridization state. The adsorbed structure is proposed in which ethylene is di‐σ bonded to two adjacent Si atoms of the dimer at the Si(100) surface. The thermal decomposition of chemisorbed ethylene and the influence of steps on the adsorbed states of ethylene are discussed.