Physical model of drain conductance, g/sub d/, degradation of NMOSFET's due to interface state generation by hot carrier injection
- 1 June 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 41 (6), 964-969
- https://doi.org/10.1109/16.293309
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- A New Insight Into Correlation Between DC And AC Hot-carrier Degradation Of MOS DevicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993
- Channel-length-independent hot-carrier degradation in analog p-MOS operationIEEE Electron Device Letters, 1992
- Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxidesIEEE Electron Device Letters, 1992
- Hot-carrier degradation of p-MOSFET's in analog operation: the relevance of the channel-length-independent drain conductance degradationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992
- A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generationIEEE Transactions on Electron Devices, 1991
- Influence of MOSFET I-V characteristics on switching delay time of CMOS inverters after hot-carriers stressIEEE Electron Device Letters, 1991
- Interface state creation and charge trapping in the medium-to-high gate voltage range (V/sub d//2or=V/sub d/) during hot-carrier stressing of n-MOS transistorsIEEE Transactions on Electron Devices, 1990
- Hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors: Oxide charge versus interface trapsJournal of Applied Physics, 1989
- Relationship between MOSFET degradation and hot-electron-induced interface-state generationIEEE Electron Device Letters, 1984
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980