Characterization of surfactant introduction into germanium-rich Si1−x Gex molecular beam epitaxy layer growth on silicon by means of secondary-ion mass spectrometry and Auger electron spectroscopy
- 10 December 1992
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 221 (1-2), 61-64
- https://doi.org/10.1016/0040-6090(92)90796-e
Abstract
No abstract availableKeywords
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