Phosphorous passivation of the SiO2/4H–SiC interface
- 16 November 2011
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 68, 103-107
- https://doi.org/10.1016/j.sse.2011.10.030
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Increase in the electron mobility in the inversion channel of a Si-MOS transistor in the case of ion polarization of the gate oxideSemiconductors, 2007
- Bonding at theInterface and the Effects of Nitrogen and HydrogenPhysical Review Letters, 2007
- Interface Passivation for Silicon Dioxide Layers on Silicon CarbideMRS Bulletin, 2005
- Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridationApplied Physics Letters, 2003
- Effects of nitridation in gate oxides grown on 4H-SiCJournal of Applied Physics, 2001
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbideApplied Physics Letters, 2000
- High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) faceIEEE Electron Device Letters, 1999
- Electronic properties of interfacesMicroelectronic Engineering, 1999
- Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytypeIEEE Electron Device Letters, 1999
- Trends in power semiconductor devicesIEEE Transactions on Electron Devices, 1996