AsH3 Pre-Exposure Conditions for GaAs Epitaxial Growth on Si by Melalorganic Chemical Vapor Deposition
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A), L534
- https://doi.org/10.1143/jjap.29.l534
Abstract
The effects of AsH3 pre-exposure at high temperature on the crystalline quality of GaAs layer grown on Si have been studied using X-ray diffraction. The full width at half-maximum (FWHM) of the (400) reflection from the GaAs layer was affected by the pressure; at 100O°C, the sample with the AsH3 pre-exposure at 76 Torr shows narrower FWHM than that with the pre-exposure at 760 Torr. Both samples are analyzed by SIMS. The concentration profile of As and Si around the interface in the sample with lower pressure is sharper than that in the sample with higher pressure.Keywords
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