A submicrometer Nb/AlOx/Nb Josephson junction
- 1 August 1988
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (3), 1586-1588
- https://doi.org/10.1063/1.341792
Abstract
High‐quality, submicrometer Nb/AlOx /Nb Josephson junctions were fabricated. The junction area was defined by anodizing an upper Nb electrode using a thin SiO2 mask. By utilizing the anodized Nb as an etch stop during the reactive ion etching of the contact hole in an SiO2 insulator, we could make a junction smaller than the contact hole size. Using stress‐free Nb for the junction electrodes was crucial in achieving good current‐voltage characteristics. High‐quality Nb/AlOx /Nb junctions as small as 0.7 μm square were produced. The quality parameter Vm was greater than 30 mV for a jc of 6800 A/cm2.Keywords
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