Annealing temperature dependent oxygen vacancy behavior in SnO2 thin films fabricated by pulsed laser deposition
- 31 May 2011
- journal article
- Published by Elsevier BV in Current Applied Physics
- Vol. 11 (3), S306-S309
- https://doi.org/10.1016/j.cap.2010.11.067
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Energetic and Electronic Structure Analysis of Intrinsic Defects in SnO2The Journal of Physical Chemistry C, 2008
- Deep level transient spectroscopy of SnO2-based varistorsApplied Physics Letters, 2007
- Influence of annealing temperature on the band structure of sol-gel Ba0.65Sr0.35TiO3 thin films on n-type Si(100)Applied Physics Letters, 2006
- The surface and materials science of tin oxideProgress in Surface Science, 2005
- Synthesis and properties of epitaxial electronic oxide thin-film materialsMaterials Science and Engineering: R: Reports, 2004
- An investigation on the utilization of perovskite-type oxides La1−xSrxMO3 (M = Co0.77Bi0.20Pd0.03) as three-way catalystsApplied Catalysis B: Environmental, 2001
- Low resistance transparent electrodes for large area flat display devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Semiconducting oxides as gas-sensitive resistorsSensors and Actuators B: Chemical, 1999
- XPS studies on the oxygen species of LaMn1−xCuxO3+λApplied Catalysis A: General, 1998
- FT-IR characterization of tin dioxide gas sensor materials under working conditionsSpectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 1995