High resolution studies of crystalline damage induced by lapping and single-point diamond machining of Si(100)
- 1 May 1996
- journal article
- Published by Springer Science and Business Media LLC in Journal of Materials Research
- Vol. 11 (5), 1228-1237
- https://doi.org/10.1557/jmr.1996.0157
Abstract
Si(100) wafers were prepared by both diamond turning and standard lapping and polishing techniques. For single-point diamond machining, characterization of subsurface damage resulting from ductile-regime machining identified a plastic-yield zone consisting of slip planes and dislocation networks extending 1 to 3 μm deep despite surface root-mean-square roughness values as low as 5 nm. For conventional lapping and polishing using alumina grit, a transition from brittle to ductile yield was observed for grit sizes less than 300 nm. Subsurface damage depth correlated to surface roughness in a more straightforward manner than for the diamond point machining. Completely damage-free material removal was obtained only when a chemical component to the polishing was present.Keywords
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