Characterization of Si MIS solar cell
- 1 January 1983
- journal article
- research article
- Published by Wiley in Electronics and Communications in Japan (Part I: Communications)
- Vol. 66 (8), 109-115
- https://doi.org/10.1002/ecja.4400660814
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Improved Efficiency of Si MOS Solar Cell due to Surface States and Oxide ChargesJapanese Journal of Applied Physics, 1980
- New experimental evidence for minority-carrier MIS diodesApplied Physics Letters, 1979
- High-efficiency Cr-MIS solar cells on single and polycrystalline siliconApplied Physics Letters, 1978
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- MIS Silicon Solar Cells with In2O3Antireflective CoatingJapanese Journal of Applied Physics, 1977
- Improvement of the photovoltaic efficiency of a metal-insulator-semiconductor structure: Influence of interface statesJournal of Applied Physics, 1977
- A minority carrier MIS solar cellSolid-State Electronics, 1977
- Theory of metal-insulator-semiconductor solar cellsJournal of Applied Physics, 1977
- Open-circuit voltage of MIS silicon solar cellsJournal of Applied Physics, 1976
- Photoemission of Electrons from Silicon into Silicon DioxidePhysical Review B, 1965