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Well concentration: a novel scaling limitation factor derived from DRAM retention time and its modeling
Home
Publications
Well concentration: a novel scaling limitation factor derived from DRAM retention time and its modeling
Well concentration: a novel scaling limitation factor derived from DRAM retention time and its modeling
TH
T. Hamamoto
T. Hamamoto
SS
S. Sugiura
S. Sugiura
SS
S. Sawada
S. Sawada
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19 November 2002
conference paper
conference paper
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1995.499365
Abstract
No abstract available
Keywords
LEAKAGE CURRENT
FIELD EMISSION
SCALING LIMIT
THERMIONIC EMISSION
RETENTION TIME
CIRCUITS
SEMICONDUCTOR DEVICES
Cited by 25 articles