Effects of the inversion-layer centroid on the performance of double-gate MOSFETs
- 1 January 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (1), 141-146
- https://doi.org/10.1109/16.817579
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
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