Sketched oxide single-electron transistor

Abstract

Devices that confine and process single electrons represent an important scaling limit of electronics^1,2. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties^3,4,5. Here, we use an atomic force microscope tip to reversibly ‘sketch’ single-electron transistors by controlling a metal–insulator transition at the interface of two oxides^6,7,8. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ∼ 1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.