Substitutional doping in amorphous semiconductors the As-Si system
- 1 October 1976
- journal article
- other
- Published by Informa UK Limited in Philosophical Magazine
- Vol. 34 (4), 663-667
- https://doi.org/10.1080/14786437608223805
Abstract
The amorphous alloy system As-Si has been prepared in thin film form using the plasma decomposition of silane-arsine mixtures. Electrical and optical measurements show effects characteristic of substitutional impurity doping for low concentrations of arsenic. A transition from impurity doping to alloy behaviour is observed with increasing arsenic concentration. Similar behaviour is not observed for low concentrations of silicon in arsenic.Keywords
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