Photoluminescence enhancement of (NH4)2Sx passivated InP surface by rapid thermal annealing
- 1 July 1996
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 100-101, 592-595
- https://doi.org/10.1016/0169-4332(96)00345-5
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Passivation of the InP surface using polysulfide and silicon nitride overlayerApplied Physics Letters, 1993
- Surface chemical bonding of (NH4)2Sx-treated InP(001)Applied Physics Letters, 1993
- S-passivated InP (100)-(1×1) surface prepared by a wet chemical processApplied Physics Letters, 1992
- The sulfurized InP surfaceJournal of Vacuum Science & Technology B, 1989
- Interface studies and electrical properties of plasma sulfide layers on n-type InPJournal of Applied Physics, 1988