Scattering and Interference in Epitaxial Graphene
- 13 July 2007
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 317 (5835), 219-222
- https://doi.org/10.1126/science.1142882
Abstract
A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.Keywords
This publication has 20 references indexed in Scilit:
- Weak Antilocalization in Epitaxial Graphene: Evidence for Chiral ElectronsPhysical Review Letters, 2007
- The rise of grapheneNature Materials, 2007
- Weak-Localization Magnetoresistance and Valley Symmetry in GraphenePhysical Review Letters, 2006
- Controlling the Electronic Structure of Bilayer GrapheneScience, 2006
- Electronic Confinement and Coherence in Patterned Epitaxial GrapheneScience, 2006
- Landau-Level Degeneracy and Quantum Hall Effect in a Graphite BilayerPhysical Review Letters, 2006
- Disorder Induced Localized States in GraphenePhysical Review Letters, 2006
- Two-dimensional gas of massless Dirac fermions in grapheneNature, 2005
- Experimental observation of the quantum Hall effect and Berry's phase in grapheneNature, 2005
- Long-Range Electronic Perturbations Caused by Defects Using Scanning Tunneling MicroscopyScience, 1989