InN‐based layers grown by modified HVPE
- 12 June 2006
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- Vol. 3 (6), 1444-1447
- https://doi.org/10.1002/pssc.200565454
Abstract
No abstract availableKeywords
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- Growth of InN at High Temperature by Halide Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Growth of InN thin films by hydride vapor phase epitaxyJournal of Crystal Growth, 1994
- Preparation of InN epitaxial layers in InCl3-NH3 systemCrystal Research and Technology, 1977