Electrical properties of zinc oxide nanowires and intramolecular p–n junctions
- 13 October 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (15), 3168-3170
- https://doi.org/10.1063/1.1609232
Abstract
Electrical properties of ZnOnanowires and intramolecular p–n junctions were characterized by I–V measurements. These nanowires were grown embedded in anodic aluminum oxide (AAO) templates by vapor-phase-transport growth method. The nanowires were dense, continuous, and uniform in diameter along the length of the wires. I–V measurements showed the average resistivity of the ZnOnanowires in AAO templates was about one order of magnitude higher than that of the naked single ZnOnanowire. The p–n junctions in ZnOnanowires were fabricated by a two-step growth of ZnO with and without dopant of boron (∼1 wt %) in the source. I–V results suggested that p–n junctions in ZnOnanowires were formed by the two-step method.This publication has 20 references indexed in Scilit:
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