The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
- 31 March 2006
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 83 (3), 499-505
- https://doi.org/10.1016/j.mee.2005.11.014
Abstract
No abstract availableKeywords
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