Lateral profiling of interface states along the sidewalls of channel-stop isolation
- 30 September 1985
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 28 (9), 945-956
- https://doi.org/10.1016/0038-1101(85)90088-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Characterization of dark current non-uniformities in charge-coupled devicesSolid-State Electronics, 1984
- Interpretation of a non-conventional reverse-current curve of a depletion-type gate-controlled diodeSolid-State Electronics, 1983
- Determination of interface-state parameters in a MOS capacitor by DLTSSolid-State Electronics, 1980
- Dislocation Generation at Si3 N 4 Film Edges on Silicon Substrates and Viscoelastic Behavior of SiO2 FilmsJournal of the Electrochemical Society, 1979
- Measurements on depletion-mode field effect transistors and buried channel MOS capacitors for the characterization of bulk transfer charge-coupled devicesSolid-State Electronics, 1975
- Effect of a modified theory of generation currents on an experimental determination of carrier lifetimeSolid-State Electronics, 1974
- Recombination-Generation and Optical Properties of Gold Acceptor in SiliconPhysical Review B, 1970
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952