Electron Effective Masses of InAs and GaAs as a Function of Temperature and Doping
- 1 February 1961
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 121 (3), 752-758
- https://doi.org/10.1103/physrev.121.752
Abstract
The electron effective masses of several GaAs and InAs samples at room and liquid nitrogen temperatures have been determined from Faraday rotation and infrared reflectivity measurements. An increase in effective mass with increasing carrier concentration has been found in both materials. This increase can be quantitatively interpreted in InAs in terms of the nonparabolic nature of the conduction band. In GaAs the increase in effective mass with doping suggests the existence of another set of conduction band minima above the lowest (000) minimum. The measured temperature variation of the effective mass can be attributed to two mechanisms: the increase in effective mass produced by the spread in the Fermi distribution because of the nonparabolic shape of the band, and the variation in the band structure produced by the thermal expansion of the lattice.Keywords
This publication has 16 references indexed in Scilit:
- Magnetoresistance in Gallium ArsenideProceedings of the Physical Society, 1960
- The energy-dependence of electron mass in indium antimonide determined from measurements of the infrared Faraday effectJournal of Physics and Chemistry of Solids, 1959
- Determination of the Effective Electron Mass in GaAs by the Infra-Red Faraday EffectProceedings of the Physical Society, 1959
- Free-Carrier Faraday Effect in n-Type GermaniumJournal of Applied Physics, 1959
- Die magnetische Suszeptibilität der Elektronen in Silizium, Germanium und IndiumarsenidThe European Physical Journal A, 1959
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Transport of electrons in intrinsic InSbJournal of Physics and Chemistry of Solids, 1959
- Zeeman-Type Magneto-Optical Studies of Interband Transitions in SemiconductorsPhysical Review B, 1959
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957