Prebake Effects in Chemical Amplification Electron-Beam Resist
- 1 November 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (11S), 3138
- https://doi.org/10.1143/jjap.30.3138
Abstract
Prebake effects in chemical amplification electron-beam resist SAL601-ER7 have been investigated. Resolution of the resist is found to be greatly dependent on the prebake conditions when a thick resist film is used. The results of FT-IR and GC/MS analysis suggest that differences in the resolution between thin and thick resist films are due to the residual solvent content which depends on prebake temperature. Because the residual solvent in the resist film is thought to act as a kind of reaction medium, it can be concluded that it affects the diffusion length of the acid catalyst.Keywords
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