Galvanomagnetic Effects in Bismuth

Abstract

Conductivity, Hall effect, and magnetoresistance in single crystals of pure and tin-doped bismuth have been measured as functions of temperature between 80 and 300°K and as functions of magnetic field up to 2000 oersted. A simple many-valley model for the band structure of bismuth is proposed, and explicit expressions for the galvanomagnetic effects are derived. Numerical values are obtained for the number of conduction electrons and holes, their mobilities, and the overlap of valence and conduction bands.