Hot Carrier–Assisted Intrinsic Photoresponse in Graphene
Top Cited Papers
- 4 November 2011
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 334 (6056), 648-652
- https://doi.org/10.1126/science.1211384
Abstract
Photoexcited electrons in graphene remain thermally excited because they cannot transfer this energy to lattice vibrations.Keywords
Other Versions
This publication has 24 references indexed in Scilit:
- High-performance flat-panel solar thermoelectric generators with high thermal concentrationNature Materials, 2011
- Visualization of charge transport through Landau levels in grapheneNature Physics, 2010
- Photo-Thermoelectric Effect at a Graphene Interface JunctionNano Letters, 2009
- Ultrafast graphene photodetectorNature Nanotechnology, 2009
- Thermopower and Nernst effect in graphene in a magnetic fieldPhysical Review B, 2009
- Quasiparticle interference and Landau level spectroscopy in graphene in the presence of a strong magnetic fieldPhysical Review B, 2009
- Imaging of Photocurrent Generation and Collection in Single-Layer GrapheneNano Letters, 2009
- Electronic Transport and Quantum Hall Effect in Bipolar GrapheneJunctionsPhysical Review Letters, 2007
- Transport Measurements Across a Tunable Potential Barrier in GraphenePhysical Review Letters, 2007
- Asymmetry gap in the electronic band structure of bilayer graphenePhysical Review B, 2006