Performance of InGaAs/InP avalanche photodiodes as gated-mode photon counters
- 20 April 1998
- journal article
- Published by Optica Publishing Group in Applied Optics
- Vol. 37 (12), 2272-2277
- https://doi.org/10.1364/ao.37.002272
Abstract
We investigate the performance of separate absorption multiplication InGaAs/InP avalanche photodiodes as single-photon detectors for 1.3- and 1.55-μm wavelengths. First we study afterpulses and choose experimental conditions to limit this effect. Then we compare the InGaAs/InP detector with a germanium avalanche photodiode; the former shows a lower dark-count rate. The effect of operating temperature is studied for both wavelengths. At 173 K and with a dark-count probability per gate of 10-4, detection efficiencies of 16% for 1.3 μm and 7% for 1.55 μm are obtained. Finally, a timing resolution of less than 200 ps is demonstrated.Keywords
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