IC reliability simulation
- 1 March 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 27 (3), 241-246
- https://doi.org/10.1109/4.121544
Abstract
The motivation and challenges of IC reliability simulation are discussed. The reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation.Keywords
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