Determination of the gate-tunable band gap and tight-binding parameters in bilayer graphene using infrared spectroscopy
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- 8 October 2009
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 80 (16), 165406
- https://doi.org/10.1103/physrevb.80.165406
Abstract
We present a compelling evidence for the opening of a bandgap in exfoliated bottom-gated bilayer graphene by fitting the gate-voltage-modulated infrared reflectivity spectra in a large range of doping levels with a tight-binding model and the Kubo formula. A close quantitative agreement between the experimental and calculated spectra is achieved, allowing us to determine self-consistently the full set of Slonczewski-Weiss-McClure tight-binding parameters together with the gate-voltage-dependent bandgap. The doping dependence of the bandgap shows a good agreement with the existing calculations that take the effects of self-screening into account. We also identify certain mismatches between the tight-binding model and the data, which can be related to electron-electron and electron-phonon interactions.Keywords
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