An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
- 1 October 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 5 (4), 459-468
- https://doi.org/10.1109/63.60690
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
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- The Transport of Added Current Carriers in a Homogeneous SemiconductorPhysical Review B, 1953