Radiation test results on first silicon in the design against radiation effects (DARE) library
- 5 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 52 (5), 1550-1554
- https://doi.org/10.1109/tns.2005.855818
Abstract
This paper describes the first use of a Radiation Hardened by Design (DARE: Design Against Radiation Effects) library for the UMC 180 nm CMOS six-layer metal technology in a telecom application specific integrated circuit (ASIC). An innovative adapted "design for test" approach has been used to allow the evaluation of the behavior of this ASIC under radiation. Radiation tests results and conclusions on future use of this library are also presented.Keywords
This publication has 6 references indexed in Scilit:
- Single event effect characteristics of CMOS devices employing various epi-layer thicknessesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Permanent single event functional interrupts (SEFIs) in 128- and 256-megabit synchronous dynamic random access memories (SDRAMs)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ion-induced stuck bits in 1T/1C SDRAM cellsIEEE Transactions on Nuclear Science, 2001
- An empirical model for predicting proton induced upsetIEEE Transactions on Nuclear Science, 1996
- A new class of single event hard errors [DRAM cells]IEEE Transactions on Nuclear Science, 1994
- Latchup in CMOS from single particlesIEEE Transactions on Nuclear Science, 1990