The development process resulting in a pulsed thick film IR emitter is described. Various configurations are discussed, including resistor and substrate variations, as well as packaging limitations. Test results are reported that indicate failure mechanisms overcome, including high current density and high temperature, as well as material migration and resistor degradation. Mechanical constraints and design configurations are also discussed. Current emitter design allows modulated operation from 500°C to 600°C at 40 to 100 Hz for periods in excess of 10,000 hours. Test results on newer materials indicate that peak temperatures and modulations twice that are feasible. Other potential applications are discussed.