Deep-ultraviolet-light-driven reversible doping of WS2 field-effect transistors
- 17 November 2014
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 7 (2), 747-757
- https://doi.org/10.1039/c4nr05129g
Abstract
We have developed a doping technique to drastically improve electrical and photoelectric characteristics of WS2 field-effect transistors.This publication has 47 references indexed in Scilit:
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