Soft x-ray photoemission studies of the HfO2/SiO2/Si system
- 25 March 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 80 (12), 2135-2137
- https://doi.org/10.1063/1.1450049
Abstract
Soft x-ray photoelectron spectroscopy with synchrotron radiation was employed to study the valence-band offsets for the HfO2/SiO2/Si and HfO2/SiOxNy/Si systems. We obtained a valence-band offset difference of −1.05±0.1 eV between HfO2 (in HfO2/15 Å SiO2/Si) and SiO2 (in 15 Å SiO2/Si). There is no measurable difference between the HfO2 valence-band maximum positions of the HfO2/10 Å SiOxNy/Si and HfO2/15 Å SiO2/Si systems.Keywords
This publication has 13 references indexed in Scilit:
- Chemical vapor deposition of HfO2 films on Si(100)Journal of Vacuum Science & Technology A, 2002
- Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectricsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Alternative dielectrics to silicon dioxide for memory and logic devicesNature, 2000
- Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealingApplied Physics Letters, 2000
- Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- In situ study of atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2OApplied Surface Science, 1997
- High Dielectric Constant of RF-Sputtered HfO2 Thin FilmsJapanese Journal of Applied Physics, 1992
- Microscopic structure of the/Si interfacePhysical Review B, 1988
- Semiconductor core-level to valence-band maximum binding-energy differences: Precise determination by x-ray photoelectron spectroscopyPhysical Review B, 1983