Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
- 15 February 2013
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 60 (3), 1114-1121
- https://doi.org/10.1109/ted.2013.2241064
Abstract
The endurance/retention performance of HfO 2 / Metal cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning strong thermodynamic ability of extracting oxygen from HfO 2 , long pulse endurance (>10 10 cycles) could be achieved. For Ta cap, owning lower thermodynamic ability of extracting oxygen from HfO 2 , better retention can be achieved. Therefore, an endurance/retention performance tradeoff is identified on the 40 nm × 40 nm HfO 2 /Metal cap bipolar RRAM devices. The tradeoff of endurance/retention performance can be explained by a different filament constriction shape depending on metal cap layer as derived from fitting I - V curves in the quantum point contact model. This difference in filament constriction shape is attributed to the thermodynamics difference of metal cap: Hf and Ti have a stronger thermodynamical ability to extract oxygen from HfO 2 than Ta. The possibility of tuning the intrinsic reliability performance by changing the cap materials paves a way for optimizing the operation of RRAM devices into the desired specifics.Keywords
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