A single supply high performance PA MMIC for GSM handsets using quasi-enhancement mode PHEMT
- 13 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 923-926 vol.2
- https://doi.org/10.1109/mwsym.2001.967042
Abstract
A 3-stage GaAs FET power amplifier MMIC utilizing a quasi-enhancement mode PHEMT process has been developed for single supply GSM applications. The MMIC operates from a 3.2 V power supply and at 900 MHz, provides 35.5 dBm output power and 63.0% power added efficiency. Another 3 stage MMIC designed for DCS-1800, which at 1750 MHz provides 33.2 dBm output power with 61.1% PAE, is also presented.Keywords
This publication has 2 references indexed in Scilit:
- An E-mode GaAs FET power amplifier MMIC for GSM phonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A single supply miniature PA MMIC for multi-mode digital handsets using quasi-enhancement mode PHEMTPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002