Spin and orbital occupation and phase transitions in
- 1 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (17), 11506-11509
- https://doi.org/10.1103/physrevb.61.11506
Abstract
Polarization dependent x-ray-absorption measurements were performed on pure and Cr-doped single crystals in the antiferromagnetic insulating, paramagnetic insulating, and metallic phases. The orbital occupation of the V ion is found to depend appreciably on the phase, but always with the character, requiring an explanation which is beyond the elegant simplicity of the pure one-band Hubbard model or of models in which the orbital is projected out by means of a simple dimerization. The results reveal the critical role of the spin and orbital dependence of the on-site Coulomb energy, and a mechanism is proposed to explain the closing or opening of the band gaps which are of much higher energy scale than the transition temperatures.
Keywords
This publication has 43 references indexed in Scilit:
- Electrical properties of thesystemPhysical Review B, 1980
- High-temperature crystal chemistry of V2O3 and 1% chromium-doped V2O3Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1975
- Metal-Insulator Transitions in Pure and DopedPhysical Review B, 1973
- Electronic Specific Heat of Metallic Ti-DopedPhysical Review Letters, 1971
- Crystal Structure of the Low-Temperature Antiferromagnetic Phase ofPhysical Review B, 1970
- Metal-Insulator Transition inPhysical Review B, 1970
- Antiferromagnetism inPhysical Review Letters, 1970
- Mott Transition in Cr-DopedPhysical Review Letters, 1969
- Low-Temperature X-Ray Diffraction Studies on Vanadium SesquioxideJournal of Applied Physics, 1960
- The Basis of the Electron Theory of Metals, with Special Reference to the Transition MetalsProceedings of the Physical Society. Section A, 1949