Abstract
A critical review of recent studies of the geometrical and electronic structure of the Si(001) and Si(111) surfaces is given. Emphasis is placed on low‐energy electron diffraction(LEED) studies of the geometrical structure, photoelectron spectroscopy studies of the electronic structure, and theoretical studies of the electronic and geometric structure of the Si(111)–(2×1), Si(111)–(7×7), Si(111)–(1×1)X, and Si(001)–(2×1) surfaces.