Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
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- 18 July 2012
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 12 (8), 4013-4017
- https://doi.org/10.1021/nl301335q
Abstract
Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (2/(V·s)) and a high on/off current ratio (105). Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS2 films make them suitable for use in large-area flexible electronics.This publication has 28 references indexed in Scilit:
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