How to determine the limits of usingAf nfunction for extraction of ITO cell contribution to dielectric spectra?
- 1 October 2010
- journal article
- research article
- Published by Informa UK Limited in Phase Transitions
- Vol. 83 (10-11), 836-843
- https://doi.org/10.1080/01411594.2010.509151
Abstract
The “classical” way to estimate and extract the high frequency indium tin oxide (ITO) cell contribution to dielectric losses is to use a special shape of frequency function: [R. Dhar, An impedance model to improve the higher frequency limit of electrical measurements on the capacitor made from electrodes of finite resistances, Indian J. Pure Appl. Phys. 42 (2004), pp. 56–61; M.B. Pandey, R. Dhar, and R. Dąbrowski, Dielectric spectroscopy of a newly synthesized chlorinated analogue of MHPOBC antiferroelectric liquid crystals, Ferroelectrics 343 (2006), pp. 83–100]. This article explains why such a shape for estimating function is used and determines how fast relaxation can be investigated using this method. The shape can be derived from the model presented in [P. Perkowski Dielectric spectroscopy of liquid crystals. Theoretical model of ITO electrodes influence on dielectric measurements, Opto-Electron. Rev. 17 (2009), pp. 180–186]. This function can yield accurate results rather for slow relaxations investigated in ITO cells.Keywords
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