Two-Terminal P-N Junction Devices for Frequency Conversion and Computation
- 1 September 1956
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
- Vol. 44 (9), 1183-1191
- https://doi.org/10.1109/jrproc.1956.275173
Abstract
Design principles for semiconductor diodes are derived from the analysis of idealized p-n junctions. The analysis gives the superheterodyne conversion matrix and the large-signal admittance in terms of the small-signal diffusion admittances. Structures that minimize minority-carrier storage give minimum conversion loss under matched conditions in converting a high frequency to a low frequency, and are useful in logic circuits of computers. Examples are the emitter-base diode of a transistor and a small bonded or point contact. Amplification and improved power-handling capabilities can be obtained in converting a low frequency to a high frequency, if the geometry favors storage of minority carriers near the junction. Such structures can also be used as pulse amplifiers.Keywords
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