Temperature sensitivity and high temperature operation of long wavelength semiconductor lasers

Abstract

The temperature dependence of long wavelength (1.5 μm) quantum‐well lasers has been studied theoretically assuming that the dominant contribution to the threshold current is from phonon‐assisted Auger recombination. It is found that the best possible value of T₀ at room temperature is ≊100 K. Gain calculations based on the InGaAs/InGaAsP/InP system operating at 1.5 μm indicate that the main cause of the reduction from this ideal value is due to the temperature dependence of the threshold carrier density. We also comment on the implication of this for the high temperature operation of tensile and compressive lasers.