Band-Gap Narrowing Due to Many-Body Effects in n-Type Degenerate GaAs Crystals
- 1 May 1988
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 147 (1), 253-260
- https://doi.org/10.1002/pssb.2221470129
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Band-gap shifts in heavily dopedn-type GaAsPhysical Review B, 1986
- Band gap narrowing due to many-body effects in silicon and gallium arsenideJournal of Physics C: Solid State Physics, 1984
- Band-gap narrowing in heavily doped many-valley semiconductorsPhysical Review B, 1981
- Heavily doped semiconductors and devicesAdvances in Physics, 1978